| COURSE | TITLE | EFF YEAR | EFF TERM | DEPARTMENT | CREDIT HOURS | ||||
| EE486 | SOLID STATE ELECTRONICS | 2020 | 1 | Electrical Engineering and Computer Science | 3.0 (BS=0.0, ET=3.0, MA=0.0) | ||||
| SCOPE | |||||||||
| The course covers device physics, operating principles and applications of diodes, bipolar junction transistors, and field effect transistors (FET). It begins with basic properties of crystalline solids, energy diagrams, and thermal physics. P-N junction diodes are the first semiconductor device explored with further study into metal oxide semiconductor (MOS) capacitor and MOSFET based devices. The course also covers the layout of complementary metal oxide semiconductor (CMOS) gates on an integrated circuit chip. Throughout the course, a number of general electronic devices are introduced including digital memories, charge coupled devices, solar cells, photodiodes, light emitting diodes and lasers. The laboratories are focused on P-N junction device parameter extraction, CMOS digital circuit characterizations, and the application of optoelectronic devices. | |||||||||
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| SPECIAL REQUIREMENTS: | |||||||||
| None | |||||||||
| TYPE | COURSE | EFF YEAR | EFF TERM | TRACK | RED BOOK FLG |
| PRE REQUISITE | |||||
| EE362 | 2005 | 1 | 1 | Y | |
| AYT | #SECT/SIZE | CPBLTY | ENRLD | WAIT | SEATS | CLOSED | DETAILS | ||
| 2024 - 2 | 1 | 18 | 18 | 12 | 0 | 6 | N | Hours | |
| 2025 - 2 | 1 | 18 | 18 | 6 | 0 | 12 | N | Hours | |
| 2027 - 2 | 1 | 18 | 18 | 5 | 0 | 13 | N | Hours | |
| COURSE | TITLE | EFF YEAR | EFF TERM | DEPARTMENT | CREDIT HOURS | ||||
| EE486 | SOLID STATE ELECTRONICS | 2011 | 2 | Electrical Engineering and Computer Science | 3.0 (BS=0.0, ET=3.0, MA=0.0) | ||||
| SCOPE | |||||||||
| The course covers device physics, operating principles and applications of diodes, bipolar junction transistors, and field effect transistors (FET). It begins with basic properties of crystalline solids, energy diagrams, and thermal physics. P-N junction diodes are the first semiconducting device explored with further study into MOS capacitor and MOSFET based digital circuits. The course normally covers layout of complementary metal oxide semiconductor (CMOS) gates on an integrated circuit chip. Throughout the course, a number of modern electronic devices are introduced including digital memories, charge coupled devices, solar cells, photodiodes, and light emitting diodes. The laboratories are focused on integrated circuit design and layout, device characterization, and simulation using computer aided design (CAD) tools. | |||||||||
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| SPECIAL REQUIREMENTS: | |||||||||
| Layout and fabrication of an integrated circuit chip. | |||||||||
| TYPE | COURSE | EFF YEAR | EFF TERM | TRACK | RED BOOK FLG |
| PRE REQUISITE | |||||
| EE362 | 2005 | 1 | 1 | Y | |
| COURSE | TITLE | EFF YEAR | EFF TERM | DEPARTMENT | CREDIT HOURS | ||||
| EE486 | SOLID STATE ELECTRONICS | 2006 | 1 | Electrical Engineering and Computer Science | 3.0 (BS=0.0, ET=3.0, MA=0.0) | ||||
| SCOPE | |||||||||
| The course covers the device physics, operating principles and applications of diodes and field effect transistors (FET). It begins with a review of the operation of the metal oxide semiconductor field effect transistor (MOSFET) covered in EE362. Then MOSFET-based digital circuits are studied. The course normally provides the opportunity for layout and fabrication of complementary metal oxide semiconductor (CMOS) gates on an integrated circuit chip. The chips are experimentally tested prior to the end of the semester. Emphasis then shifts to the basic properties of crystalline solids, p-n junction diodes and the MOSFET. Throughout the course, a number of modern electronic devices are introduced including digital memories, charge coupled devices, silicon controlled rectifiers, solar cells, and light emitting diodes. The laboratories are focused on integrated circuit design and layout, device characterization and simulation using computer aided design (CAD) tools. | |||||||||
|
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| SPECIAL REQUIREMENTS: | |||||||||
| Layout and fabrication of an integrated circuit chip. | |||||||||
| TYPE | COURSE | EFF YEAR | EFF TERM | TRACK | RED BOOK FLG |
| PRE REQUISITE | |||||
| EE362 | 2005 | 1 | 1 | Y | |
| COURSE | TITLE | EFF YEAR | EFF TERM | DEPARTMENT | CREDIT HOURS | ||||
| EE486 | SOLID STATE ELECTRONICS | 1972 | 2 | Electrical Engineering and Computer Science | 3.0 (BS=0.0, ET=3.0, MA=0.0) | ||||
| SCOPE | |||||||||
| The course begins with a review of selected basic properties of crystalline solids. Emphasis then shifts to the specific characteristics of semiconductor materials. After considering the p-n junction, the cadet studies a number of modern electronic devices which may include field effect transistors, integrated circuits, charge coupled devices, solar cells, semiconductor lasers, and microwave devices. The discussion of MOS devices is extended to gate, flip-flop, and memory circuit topologies. The course typically provides an opportunity for layout and fabrication of an integrated circuit chip. The chips are tested prior to the end of the term. Laboratories also stress the use of simulation software to obtain a structure profile and simulate device electrical characteristics. Course design content includes integrated circuit design and layout, CMOS gate design, and design of laboratory testing procedures. | |||||||||
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| SPECIAL REQUIREMENTS: | |||||||||
| Layout and fabrication of an integrated circuit chip. | |||||||||
| TYPE | COURSE | EFF YEAR | EFF TERM | TRACK | RED BOOK FLG |
| PRE REQUISITE | |||||
| EE363 | 1986 | 2 | 1 | Y | |
| EE363A | 1986 | 2 | 2 | Y | |
| EE362 | 2004 | 2 | 3 | Y | |